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SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M391A1K43BB2-CTD 8GB

SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M391A1K43BB2-CTD 8GB

Overall score
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Overall score
star star star star star
Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Differences Specifications Comments

Differences

SK Hynix HMA451U6AFR8N-TF 4GB Reasons to consider
SK Hynix HMA451U6AFR8N-TF 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 64
    Around 42% lower latency
  • Faster write speed, GB/s
    10.6 left arrow 9.3
    Average value in the tests
Samsung M391A1K43BB2-CTD 8GB Reasons to consider
Samsung M391A1K43BB2-CTD 8GB
Report a bug
  • Faster reading speed, GB/s
    17.5 left arrow 14.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 17000
    Around 1.25 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M391A1K43BB2-CTD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 64
  • Read speed, GB/s
    14.7 left arrow 17.5
  • Write speed, GB/s
    10.6 left arrow 9.3
  • Memory bandwidth, mbps
    17000 left arrow 21300
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2438 left arrow 2205

SK Hynix HMA451U6AFR8N-TF 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M391A1K43BB2-CTD 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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