RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT31GR7BFR4C-H9 8GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Compare
SK Hynix HMT31GR7BFR4C-H9 8GB vs Apacer Technology 78.BAGN8.AZC0B 4GB
Overall score
SK Hynix HMT31GR7BFR4C-H9 8GB
Overall score
Apacer Technology 78.BAGN8.AZC0B 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT31GR7BFR4C-H9 8GB
Report a bug
Below the latency in the PassMark tests, ns
58
71
Around 18% lower latency
Reasons to consider
Apacer Technology 78.BAGN8.AZC0B 4GB
Report a bug
Faster reading speed, GB/s
15.9
8.2
Average value in the tests
Faster write speed, GB/s
8.0
6.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT31GR7BFR4C-H9 8GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
58
71
Read speed, GB/s
8.2
15.9
Write speed, GB/s
6.4
8.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1718
1768
SK Hynix HMT31GR7BFR4C-H9 8GB RAM comparisons
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT102464BF1339.C16 8GB
Apacer Technology 78.BAGN8.AZC0B 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-4GRB 4GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMW64GX4M2E3200C16 32GB
PNY Electronics PNY 2GB
Samsung M378A5244BB0-CRC 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMD32GX4M4B3333C16 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
DSL Memory D4SH1G081SH26A-C 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston MSI24D4S7S8MB-8 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5663-007.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-5066C20-8GVK 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Panram International Corporation D4N2400PS-8G 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Report a bug
×
Bug description
Source link