RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT325U6CFR8C-PB 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Compare
SK Hynix HMT325U6CFR8C-PB 2GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Overall score
SK Hynix HMT325U6CFR8C-PB 2GB
Overall score
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT325U6CFR8C-PB 2GB
Report a bug
Reasons to consider
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
43
Around -59% lower latency
Faster reading speed, GB/s
17.4
12.3
Average value in the tests
Faster write speed, GB/s
14.5
8.1
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT325U6CFR8C-PB 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
27
Read speed, GB/s
12.3
17.4
Write speed, GB/s
8.1
14.5
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1706
3692
SK Hynix HMT325U6CFR8C-PB 2GB RAM comparisons
OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Avant Technology F6451U64F9333G 4GB
Corsair CMSX64GX4M4A2666C18 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3000C15-4GTZB 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M378A1K43DB2-CVF 8GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
Swissbit MEU25664D6BC2EP-30 2GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
AMD AE34G1601U1 4GB
Kingston 9905598-009.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M391A2K43BB1-CPB 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMSX16GX4M2A2666C18 8GB
Report a bug
×
Bug description
Source link