RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Compare
SK Hynix HMT425S6CFR6A-PB 2GB vs G Skill Intl F4-4400C18-8GTZRC 8GB
Overall score
SK Hynix HMT425S6CFR6A-PB 2GB
Overall score
G Skill Intl F4-4400C18-8GTZRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT425S6CFR6A-PB 2GB
Report a bug
Reasons to consider
G Skill Intl F4-4400C18-8GTZRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
41
Around -37% lower latency
Faster reading speed, GB/s
22.3
10.1
Average value in the tests
Faster write speed, GB/s
16.3
7.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
30
Read speed, GB/s
10.1
22.3
Write speed, GB/s
7.1
16.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1484
3697
SK Hynix HMT425S6CFR6A-PB 2GB RAM comparisons
Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C14-16GVK 16GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-2133C15-8GRR 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
AMD AE34G1601U1 4GB
Roa Logic BV W4U2666CX1-8G 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KHX2133C13S4/16G 16GB
Kingston 9905403-090.A01LF 4GB
Corsair CMN32GX4M2Z3200C16 16GB
Samsung M471B5273CH0-CH9 4GB
Essencore Limited KD44GU481-26N1600 4GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
Kingston HP698651-154-MCN 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F3-1600C11-8GSQ 8GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Report a bug
×
Bug description
Source link