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SK Hynix HYMP112S64CP6-S6 1GB
Samsung M378A5244CB0-CTD 4GB

SK Hynix HYMP112S64CP6-S6 1GB vs Samsung M378A5244CB0-CTD 4GB

Overall score
star star star star star
SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Overall score
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Differences Specifications Comments

Differences

SK Hynix HYMP112S64CP6-S6 1GB Reasons to consider
SK Hynix HYMP112S64CP6-S6 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 15.8
    Average value in the tests
Samsung M378A5244CB0-CTD 4GB Reasons to consider
Samsung M378A5244CB0-CTD 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 65
    Around -81% lower latency
  • Faster write speed, GB/s
    11.8 left arrow 1,711.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP112S64CP6-S6 1GB
Samsung M378A5244CB0-CTD 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 36
  • Read speed, GB/s
    4,018.7 left arrow 15.8
  • Write speed, GB/s
    1,711.1 left arrow 11.8
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    513 left arrow 2497

SK Hynix HYMP112S64CP6-S6 1GB RAM comparisons

Corsair VSA2GSDS667C4 2GB
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Samsung M378A5244CB0-CTD 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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