RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
18.1
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
63
Around -125% lower latency
Faster write speed, GB/s
15.6
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
28
Read speed, GB/s
3,231.0
18.1
Write speed, GB/s
1,447.3
15.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
478
3693
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KF3000C15D4/8GX 8GB
Samsung M378A1G43DB0-CPB 8GB
SpecTek Incorporated 16G2666CL19 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3000C15-4GVRB 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-5333C22-8GTRG 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston HP26D4S9S8HJ-8 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMW16GX4M2D3600C18 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2666C15-16GVK 16GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston 9905622-058.A00G 8GB
Crucial Technology CT102464BF160B-16F 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Samsung M471A5244CB0-CWE 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Report a bug
×
Bug description
Source link