STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3600C18-8GTZR 8GB

Overall score

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

Differences Specifications Comments

Differences

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Faster reading speed, GB/s

3 19.3

Average value in the tests

G Skill Intl F4-3600C18-8GTZR 8GB

Reasons to consider
G Skill Intl F4-3600C18-8GTZR 8GB

Below the latency in the PassMark tests, ns

29 63

Around -117% lower latency
Faster write speed, GB/s

16.0 1,447.3

Average value in the tests
Higher memory bandwidth, mbps

17000 5300

Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3600C18-8GTZR 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

63 29
Read speed, GB/s

3,231.0 19.3
Write speed, GB/s

1,447.3 16.0
Memory bandwidth, mbps

5300 17000

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

478 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Latest comparisons

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

A-DATA Technology DDR3L 1333G 4GB

A-DATA Technology DDR3L 1333G 4GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair MK16GX4M2B3200C16 8GB

Corsair MK16GX4M2B3200C16 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Essencore Limited KD4AGU880-36A180U 16GB

Essencore Limited KD4AGU880-36A180U 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB