RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-3733C17-8GTZKW 8GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
G Skill Intl F4-3733C17-8GTZKW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
19.3
Average value in the tests
Reasons to consider
G Skill Intl F4-3733C17-8GTZKW 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
50
Around -163% lower latency
Faster write speed, GB/s
13.9
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
19
Read speed, GB/s
3,757.3
19.3
Write speed, GB/s
1,457.4
13.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
3310
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3733C17-8GTZKW 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Transcend Information TS512MLH64V1H 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMK8GX4M2A2666C16 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905712-034.A00G 16GB
Kingston K531R8-MIN 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M393B1G70BH0-CK0 8GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
A-DATA Technology DDR4 3200 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology CT8G4DFD8213.16FA11 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-2400C15-8GFT 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C14-8GTZR 8GB
Report a bug
×
Bug description
Source link