RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology BLS4G4D240FSA.8FAR 4GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
15.7
Average value in the tests
Faster write speed, GB/s
870.4
11.6
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
87
Around -248% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
25
Read speed, GB/s
3,155.6
15.7
Write speed, GB/s
870.4
11.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
417
2756
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Crucial Technology BLS4G4D240FSA.8FAR 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Kingston HP26D4S9S8ME-8 8GB
Samsung M471A1K43DB1-CWE 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905678-177.A00G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A5244BB0-CRC 4GB
Samsung 1600 CL10 Series 8GB
EVGA 16G-D4-2800-MR 4GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Kingston KVT8FP-HYC 4GB
G Skill Intl F4-2400C15-4GRR 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Kingston ACR26D4U9S1KA-4 4GB
Samsung M471A2K43DB1-CWE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL14-16-16 D4-2400 16GB
Report a bug
×
Bug description
Source link