RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
15
Average value in the tests
Faster write speed, GB/s
870.4
11.0
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
87
Around -164% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
33
Read speed, GB/s
3,155.6
15.0
Write speed, GB/s
870.4
11.0
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
417
2637
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Panram International Corporation W4U2400PS-8G 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Avant Technology J644GU44J2320NF 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK16GX4M4B3600C18 4GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
G Skill Intl F5-6000J3636F16G 16GB
Kingston KF3000C15D4/8GX 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Peak Electronics 256X64M-67E 2GB
Kingston X6TCK6-MIE 32GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4400C19-32GTZR 32GB
Kllisre KRE-D3U1600M/8G 8GB
Kingston 99U5702-101.A00G 8GB
Mushkin 991586 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair MK16GX4M2B3200C16 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston CBD24D4U7S8MA-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
EVGA 16G-D4-2400-MR 8GB
Report a bug
×
Bug description
Source link