RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU502203EP0201 1GB
Samsung M471A1K43DB1-CTD 8GB
Compare
Unifosa Corporation GU502203EP0201 1GB vs Samsung M471A1K43DB1-CTD 8GB
Overall score
Unifosa Corporation GU502203EP0201 1GB
Overall score
Samsung M471A1K43DB1-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU502203EP0201 1GB
Report a bug
Below the latency in the PassMark tests, ns
25
35
Around 29% lower latency
Reasons to consider
Samsung M471A1K43DB1-CTD 8GB
Report a bug
Faster reading speed, GB/s
15.7
12.6
Average value in the tests
Faster write speed, GB/s
11.8
7.7
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU502203EP0201 1GB
Samsung M471A1K43DB1-CTD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
35
Read speed, GB/s
12.6
15.7
Write speed, GB/s
7.7
11.8
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1381
2767
Unifosa Corporation GU502203EP0201 1GB RAM comparisons
AMD R334G1339U2S 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Samsung M471A1K43DB1-CTD 8GB RAM comparisons
Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M471A2K43EB1-CWE 16GB
Kingston KP223C-ELD 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M471A5143SB1-CRC 4GB
Samsung M471B1G73DB0-YK0 8GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avant Technology W6451U66J7240ND 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK16GX4M4A2400C14 4GB
G Skill Intl F5-6400J3239G16G 16GB
V-Color Technology Inc. TC416G24D817 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Chun Well Technology Holding Limited MD4U1632161DCW 16G
Kingston K531R8-MIN 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905701-032.A00G 16GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMU32GX4M2C3333C16 16GB
Peak Electronics 256X64M-67E 2GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Report a bug
×
Bug description
Source link