RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378A1K43EB2-CWE 8GB
Compare
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Samsung M378A1K43EB2-CWE 8GB
Overall score
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
33
Around 24% lower latency
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
12.6
Average value in the tests
Faster write speed, GB/s
12.0
7.2
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
33
Read speed, GB/s
12.6
17.6
Write speed, GB/s
7.2
12.0
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2051
2910
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM comparisons
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3000C14-8GVR 8GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMR128GX4M8Z2933C16 16GB
Kingston K1N7HK-ELC 2GB
Samsung M386A4K40BB0-CRC 32GB
Kingston 9905403-038.A00LF 4GB
Corsair CMW32GX4M4C3200C14 8GB
SK Hynix HMT351S6EFR8A-PB 4GB
Kllisre 99P5428-002.A00LF 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMR64GX4M4C3000C15 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Corsair CMY8GX3M2A2666C10 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA42GR7MFR4N-TF 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C17-8GTRS 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Crucial Technology CB8GS2400.C8ET 8GB
Report a bug
×
Bug description
Source link