RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR3 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
2021
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6
Latency
29
Read speed
13.3
Write speed
9.3
№
2022
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Latency
29
Read speed
12.1
Write speed
7.8
№
2023
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8A-PB 8GB
Latency
29
Read speed
13.1
Write speed
8.5
№
2024
RAM
Kingston 9905403-006.A01LF 2GB
Latency
29
Read speed
12.1
Write speed
7.0
№
2025
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Latency
29
Read speed
13.4
Write speed
9.0
№
2026
RAM
Crucial Technology CT8G3S160BM.C16FPD 8GB
Latency
29
Read speed
12.6
Write speed
8.3
№
2027
RAM
Kingston 99U5402-464.A00LF 4GB
Latency
29
Read speed
12.2
Write speed
7.4
№
2028
RAM
Corsair CMT12GX3M3A2000C9 4GB
Latency
29
Read speed
15.2
Write speed
11.8
№
2029
RAM
Crucial Technology CT8G3S160BM.M16FJD 8GB
Latency
29
Read speed
11.6
Write speed
9.0
№
2030
RAM
Micron Technology 36JDZS51272PZ1G4F1 4GB
Latency
29
Read speed
8.8
Write speed
8.2
№
2031
RAM
Samsung M471B5673EH1-CF8 2GB
Latency
29
Read speed
9.4
Write speed
6.2
№
2032
RAM
Crucial Technology CT8G3S160BM.M16FN 8GB
Latency
29
Read speed
11.0
Write speed
7.9
№
2033
RAM
Hynix Semiconductor (Hyundai Electronics) HMT112S6BFR6C-H9 1GB
Latency
29
Read speed
8.6
Write speed
7.7
№
2034
RAM
Samsung M471B5773CHS-CF8 2GB
Latency
29
Read speed
5.7
Write speed
3.0
№
2035
RAM
Strontium SRT8G86S1-P9H 8GB
Latency
29
Read speed
12.1
Write speed
9.1
№
2036
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6
Latency
29
Read speed
10.8
Write speed
7.9
№
2037
RAM
Kingston 9905471-061.A00LF 8GB
Latency
29
Read speed
11.2
Write speed
7.4
№
2038
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-G7 2GB
Latency
29
Read speed
8.9
Write speed
5.3
№
2039
RAM
Micron Technology 36KSF1G72PZ-1G4K1 8GB
Latency
29
Read speed
12.6
Write speed
7.2
№
2040
RAM
A-DATA Technology MIF4D1D167HZ1 8GB
Latency
29
Read speed
11.3
Write speed
7.5
«
99
100
101
102
103
104
»
Últimas comparaciones
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Dust Leopard DDR4-2400 C17 8GB 8GB
Kingston 9965433-406.A00LF 8GB
G Skill Intl F4-4266C17-16GTRGB 16GB
Kingston 9905403-038.A00LF 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Samsung 1600 CL10 Series 8GB
Kingston 9965669-009.A00G 8GB
Kingston 9905469-153.A00LF 4GB
G Skill Intl F4-3200C14-8GTRS 8GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-4000C18-32GTRS 32GB
Kingston 9905403-444.A00LF 4GB
V-GEN D4H4GL30A8TS5 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 99U5643-001.A00G 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMK8GX4M1Z3200C16 8GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
G Skill Intl F4-2400C15Z8GNT 8GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3200C16-8GVKBN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Informar de un error
×
Bug description
Source link
Русский 
English 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
