RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR3 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
2161
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C-RD 8GB
Latency
30
Read speed
11.2
Write speed
8.7
№
2162
RAM
Crucial Technology CT8G3S160BM.M16FED 8GB
Latency
30
Read speed
11.8
Write speed
8.3
№
2163
RAM
Micron Technology 36JDZS1G72PZ-1G4D1 8GB
Latency
30
Read speed
10.2
Write speed
9.9
№
2164
RAM
Samsung M471B5273EB0-YK0 4GB
Latency
30
Read speed
12.5
Write speed
8.6
№
2165
RAM
G Skill Intl F3-2133C9-8GBZH 8GB
Latency
30
Read speed
14.8
Write speed
11.8
№
2166
RAM
Samsung M471B5673FH0-CF8 2GB
Latency
30
Read speed
10.6
Write speed
6.8
№
2167
RAM
Crucial Technology CT8G3S1339M.M16FN 8GB
Latency
30
Read speed
11.6
Write speed
8.2
№
2168
RAM
Samsung M473B5273DH0-YK0 4GB
Latency
30
Read speed
12.6
Write speed
8.7
№
2169
RAM
A-DATA Technology MI74C1D167HZ1 8GB
Latency
30
Read speed
12.7
Write speed
9.2
№
2170
RAM
Ramaxel Technology RMT3010KD58E8F1333 2GB
Latency
30
Read speed
9.8
Write speed
6.9
№
2171
RAM
G Skill Intl F3-2400C9-4GTXD 4GB
Latency
30
Read speed
16.9
Write speed
11.9
№
2172
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB
Latency
30
Read speed
11.4
Write speed
7.9
№
2173
RAM
SanMax Technologies Inc. SMD-4G28CVLP-16KL 4GB
Latency
30
Read speed
13.1
Write speed
8.8
№
2174
RAM
Kingston KHX1866C11S3L/4G 4GB
Latency
30
Read speed
15.0
Write speed
10.5
№
2175
RAM
Nanya Technology M2S8G64CC8HC5N-DI 8GB
Latency
30
Read speed
11.6
Write speed
8.5
№
2176
RAM
Carry Technology Co. Ltd. U3A8G93-16GBHT3B00 8GB
Latency
31
Read speed
10.4
Write speed
8.1
№
2177
RAM
Kingston 9905403-151.A00LF 2GB
Latency
31
Read speed
14.9
Write speed
9.5
№
2178
RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
Latency
31
Read speed
12.0
Write speed
8.6
№
2179
RAM
Crucial Technology CT51264BC1067.M16F 4GB
Latency
31
Read speed
8.8
Write speed
5.1
№
2180
RAM
Crucial Technology CT51264BC1339.D16F 4GB
Latency
31
Read speed
10.5
Write speed
7.7
«
106
107
108
109
110
111
»
Últimas comparaciones
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Hexon Technology Pte Ltd HEXON 1GB
Mushkin 99[2/7/4]209F 8GB
Samsung M3 78T2863EHS-CF7 1GB
V-GEN D4S8GL32A8TS 8GB
Kingston ACR512X64D3S13C9G 4GB
Apacer Technology GD2.1527WT.001 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2666C15D4/4G 4GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMD64GX4M4B3466C16 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMSX8GX4M1A2666C18 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Mushkin 99[2/7/4]200[F/T] 8GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston 9905663-012.A00G 16GB
Informar de un error
×
Bug description
Source link
Русский 
English 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
