RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Comparez
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Note globale
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Note globale
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
27
28
Autour de 4% latence réduite
Raisons de considérer
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
17.5
16.7
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
13.3
11.8
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
27
28
Vitesse de lecture, GB/s
16.7
17.5
Vitesse d'écriture, GB/s
11.8
13.3
Largeur de bande de la mémoire, mbps
21300
21300
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Vitesse d'horloge
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2756
3317
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB Comparaison des RAM
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB Comparaison des RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Kingston ACR21D4S15HAG/8G 8GB
Samsung M471B5273EB0-CK0 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Corsair CM3B4G2C1600L9 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Kingston 99U5471-052.A00LF 8GB
Mushkin 99[2/7/4]202F 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KHX2400C12D4/8GX 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Signaler un bogue
×
Bug description
Source link