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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Note globale
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Signaler un bogue
Raisons de considérer
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
19.1
12.4
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
17.0
9.6
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
21300
12800
Autour de 1.66 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
28
28
Vitesse de lecture, GB/s
12.4
19.1
Vitesse d'écriture, GB/s
9.6
17.0
Largeur de bande de la mémoire, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2329
3786
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB Comparaison des RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB Comparaison des RAM
Corsair CMD8GX3M2A2933C12 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX16GX4M2A3200C22 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Kingston KHX1866C9D3/8GX 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
G Skill Intl F3-2666C12-8GTXD 8GB
Samsung V-GeN D4S8GL24A8 8GB
Kingston 99U5458-002.A00LF 2GB
Samsung M393A2K40BB1-CRC 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Kingston 9905403-011.A03LF 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology L02 06/2010 DEXCOM 2GB
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMV16GX4M1A2400C16 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK4GX4M1A2400C14 4GB
Signaler un bogue
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