RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology BL16G32C16S4B.M8FB1 16GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Note globale
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Signaler un bogue
Raisons de considérer
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
17.2
13.4
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
14.2
9.0
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
21300
12800
Autour de 1.66 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
29
29
Vitesse de lecture, GB/s
13.4
17.2
Vitesse d'écriture, GB/s
9.0
14.2
Largeur de bande de la mémoire, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2423
3461
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB Comparaison des RAM
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB Comparaison des RAM
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Team Group Inc. Team-Value-800 2GB
Kingston KHX2933C15D4/8GX 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Samsung M393B1K70CHD-CH9 8GB
Corsair CMD16GX4M2B3733C17 8GB
Kingston 99U5428-101.A00LF 8GB
G Skill Intl F4-4133C19-4GTZ 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2933C16-16GTZRX 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung V-GeN D4S4GL32A8TL 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C15-4GRR 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA82GR8AMR4N-TF 16GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Crucial Technology CT102464BA160B.M16 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Signaler un bogue
×
Bug description
Source link