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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Note globale
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Signaler un bogue
Raisons de considérer
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
18
7.4
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
9.5
5.9
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
19200
10600
Autour de 1.81 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
62
62
Vitesse de lecture, GB/s
7.4
18.0
Vitesse d'écriture, GB/s
5.9
9.5
Largeur de bande de la mémoire, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Vitesse d'horloge
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1612
2018
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB Comparaison des RAM
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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