RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Comparez
Samsung M471A2K43EB1-CWE 16GB vs Samsung M471A2K43EB1-CWE 16GB
Note globale
Samsung M471A2K43EB1-CWE 16GB
Note globale
Samsung M471A2K43EB1-CWE 16GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Samsung M471A2K43EB1-CWE 16GB
Signaler un bogue
Raisons de considérer
Samsung M471A2K43EB1-CWE 16GB
Signaler un bogue
Spécifications
Liste complète des spécifications techniques
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
55
55
Vitesse de lecture, GB/s
15.8
15.8
Vitesse d'écriture, GB/s
13.8
13.8
Largeur de bande de la mémoire, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Vitesse d'horloge
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2701
2701
Samsung M471A2K43EB1-CWE 16GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
Samsung M471A2K43EB1-CWE 16GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Peak Electronics 256X64M-67E 2GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C14-32GTZR 32GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Avant Technology W641GU67J5213N8 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-4000C17-16GTRSB 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905598-026.A00G 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston K821PJ-MIB 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
DSL Memory D4SH1G081SH26A-C 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905702-002.A00G 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
AMD R534G1601U1S-UO 4GB
Corsair CMD16GX4M2A2400C14 8GB
Unigen Corporation U51U7200N8DD-BDH 4GB
Unigen Corporation U51U7200N8DD-BDH 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Signaler un bogue
×
Bug description
Source link