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DDR5
DDR4
DDR3
DDR2
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SK Hynix HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Comparez
SK Hynix HMA451S6AFR8N-TF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Note globale
SK Hynix HMA451S6AFR8N-TF 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
SK Hynix HMA451S6AFR8N-TF 4GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
13.9
13.8
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
10.2
10.1
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
28
37
Autour de -32% latence réduite
Spécifications
Liste complète des spécifications techniques
SK Hynix HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Principales caractéristiques
Type de mémoire
DDR4
DDR4
Latence dans PassMark, ns
37
28
Vitesse de lecture, GB/s
13.9
13.8
Vitesse d'écriture, GB/s
10.2
10.1
Largeur de bande de la mémoire, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Vitesse d'horloge
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2191
2179
SK Hynix HMA451S6AFR8N-TF 4GB Comparaison des RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB Comparaison des RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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