TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-2400C15-8GNS 8GB

Note globale

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Note globale

G Skill Intl F4-2400C15-8GNS 8GB

G Skill Intl F4-2400C15-8GNS 8GB

Différences Spécifications Commentaires

Différences

TwinMOS 8DPT5MK8-TATP 2GB

Raisons de considérer
TwinMOS 8DPT5MK8-TATP 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

3 16.2

Valeur moyenne dans les tests

G Skill Intl F4-2400C15-8GNS 8GB

Raisons de considérer
G Skill Intl F4-2400C15-8GNS 8GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

22 53

Autour de -141% latence réduite
Vitesse d'écriture plus rapide, GB/s

10.1 1,590.1

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

17000 6400

Autour de 2.66 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2400C15-8GNS 8GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

53 22
Vitesse de lecture, GB/s

3,726.4 16.2
Vitesse d'écriture, GB/s

1,590.1 10.1
Largeur de bande de la mémoire, mbps

6400 17000

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)

522 2706

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Dernières comparaisons

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Corsair CMD8GX3M2A2133C9 4GB

Corsair CMD8GX3M2A2133C9 4GB

Corsair CMZ8GX3M2X1600C7 4GB

Corsair CMZ8GX3M2X1600C7 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M4B3200C16 4GB

Corsair CMK16GX4M4B3200C16 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N