TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M471A2K43EB1-CTD 16GB

Note globale

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Note globale

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Différences Spécifications Commentaires

Différences

TwinMOS 8DPT5MK8-TATP 2GB

Raisons de considérer
TwinMOS 8DPT5MK8-TATP 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

3 15.3

Valeur moyenne dans les tests

Samsung M471A2K43EB1-CTD 16GB

Raisons de considérer
Samsung M471A2K43EB1-CTD 16GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

34 53

Autour de -56% latence réduite
Vitesse d'écriture plus rapide, GB/s

11.7 1,590.1

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

21300 6400

Autour de 3.33 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M471A2K43EB1-CTD 16GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

53 34
Vitesse de lecture, GB/s

3,726.4 15.3
Vitesse d'écriture, GB/s

1,590.1 11.7
Largeur de bande de la mémoire, mbps

6400 21300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classement PassMark (Plus il y en a, mieux c'est)

522 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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