TwinMOS 8DPT5MK8-TATP 2GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

Note globale

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Note globale

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Différences Spécifications Commentaires

Différences

TwinMOS 8DPT5MK8-TATP 2GB

Raisons de considérer
TwinMOS 8DPT5MK8-TATP 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

3 18

Valeur moyenne dans les tests

Samsung V-GeN D4S8GL26A8TL5 8GB

Raisons de considérer
Samsung V-GeN D4S8GL26A8TL5 8GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

22 53

Autour de -141% latence réduite
Vitesse d'écriture plus rapide, GB/s

12.8 1,590.1

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

19200 6400

Autour de 3 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

TwinMOS 8DPT5MK8-TATP 2GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

53 22
Vitesse de lecture, GB/s

3,726.4 18.0
Vitesse d'écriture, GB/s

1,590.1 12.8
Largeur de bande de la mémoire, mbps

6400 19200

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classement PassMark (Plus il y en a, mieux c'est)

522 3110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Dernières comparaisons

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Kingston 9905734-003.A00G 32GB

Kingston 9905734-003.A00G 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB