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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Review RAM Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB, specifications, benchmarks

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.
Specifications Performance tests Comments

Specifications

Complete list of technical specifications
Features
  • Type
    DDR3
  • Name
    Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11
  • Characteristics
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Memory bandwidth
    12800 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    9-9-9-24 / 1600 MHz
Performance by PassMark
  • Latency
    67 ns
  • Read speed
    6.2 GB/s
  • Write speed
    3.4 GB/s
# 1066 1333 1600 1866 2000 2133 2400 2600 2666 2800 2933 3000 3100 3200 MT/s
7 13.13 10.50 8.75 7.50 7.00 6.56 5.83 5.38 5.25 5.00 4.77 4.67 4.52 4.38
8 15.01 12.00 10.00 8.57 8.00 7.50 6.67 6.15 6.00 5.71 5.46 5.33 5.16 5.00
9 16.89 13.50 11.25 9.65 9.00 8.44 7.50 6.92 6.75 6.43 6.14 6.00 5.81 5.63
10 18.76 15.00 12.50 10.72 10.00 9.38 8.33 7.69 7.50 7.14 6.82 6.67 6.45 6.25
11 20.64 16.50 13.75 11.79 11.00 10.31 9.17 8.46 8.25 7.86 7.50 7.33 7.10 6.88
12 22.51 18.00 15.00 12.86 12.00 11.25 10.00 9.23 9.00 8.57 8.18 8.00 7.74 7.50
13 24.39 19.50 16.25 13.93 13.00 12.19 10.83 10.00 9.75 9.29 8.86 8.67 8.39 8.13
14 26.27 21.01 17.50 15.01 14.00 13.13 11.67 10.77 10.50 10.00 9.55 9.33 9.03 8.75
15 28.14 22.51 18.75 16.08 15.00 14.06 12.50 11.54 11.25 10.71 10.23 10.00 9.68 9.38
16 30.02 24.01 20.00 17.15 16.00 15.00 13.33 12.31 12.00 11.43 10.91 10.67 10.32 10.00
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

Performance tests

Real tests Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Latency
PassMark average delay time
40 ns
39 ns
39 ns
37 ns
38 ns
38 ns
40 ns
45 ns
35 ns
67 ns
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Read Uncached Transfer Speed
Average memory read time without caching
14.4 ns
14.4 ns
14.5 ns
15.5 ns
14.8 ns
14.7 ns
14.5 ns
11.9 ns
16.4 ns
6.2 ns
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Write Transfer Speed
Average write speed
8.8 ns
8.8 ns
9.1 ns
10.1 ns
9.3 ns
9.3 ns
9.2 ns
8.1 ns
11.4 ns
3.4 ns
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Rate the RAM
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

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