AMD R538G1601S2LS 8GB vs Samsung M471B5173CB0-YK0 4GB

Punteggio complessivo

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

Punteggio complessivo

Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

AMD R538G1601S2LS 8GB

Motivi da considerare
AMD R538G1601S2LS 8GB

Al di sotto della latenza nei test PassMark, ns

28 42

Intorno 33% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.2 7.9

Valore medio nei test

Samsung M471B5173CB0-YK0 4GB

Motivi da considerare
Samsung M471B5173CB0-YK0 4GB

Velocità di lettura più elevata, GB/s

11.9 11.3

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

AMD R538G1601S2LS 8GB

Samsung M471B5173CB0-YK0 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

28 42
Velocità di lettura, GB/s

11.3 11.9
Velocità di scrittura, GB/s

8.2 7.9
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

1793 1979

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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