RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Netac Technology Co Ltd E40832A 8GB
Confronto
Crucial Technology CT8G4SFS8266.C8FD1 8GB vs Netac Technology Co Ltd E40832A 8GB
Punteggio complessivo
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Punteggio complessivo
Netac Technology Co Ltd E40832A 8GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Segnala un bug
Motivi da considerare
Netac Technology Co Ltd E40832A 8GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
34
35
Intorno -3% latenza inferiore
Specifiche tecniche
Elenco completo delle specifiche tecniche
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Netac Technology Co Ltd E40832A 8GB
Caratteristiche principali
Tipo di memoria
DDR4
DDR4
Latenza in PassMark, ns
35
34
Velocità di lettura, GB/s
16.4
16.4
Velocità di scrittura, GB/s
10.8
10.8
Larghezza di banda della memoria, mbps
21300
21300
Other
Descrizione
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)
2660
2732
Crucial Technology CT8G4SFS8266.C8FD1 8GB Confronto tra le RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
Netac Technology Co Ltd E40832A 8GB Confronto tra le RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
A-DATA Technology DQVE1908 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3600C14-8GTRSB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Samsung M378A5244CB0-CTD 4GB
G Skill Intl F4-2666C15-8GRR 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-2800C16-4GRK 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Samsung M395T2863QZ4-CF76 1GB
DSL Memory D4SH1G081SH26A-C 8GB
Samsung M3 78T2863QZS-CF7 1GB
Apacer Technology 78.C1GMM.AUC0B 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMU16GX4M2A2666C16 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AD5U480016G-B 16GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9905678-027.A00G 8GB
Segnala un bug
×
Bug description
Source link