RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Confronto
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB
Punteggio complessivo
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Punteggio complessivo
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
27
85
Intorno 68% latenza inferiore
Velocità di lettura più elevata, GB/s
16.7
11.3
Valore medio nei test
Velocità di scrittura più elevata, GB/s
11.8
6.0
Valore medio nei test
Motivi da considerare
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Segnala un bug
Specifiche tecniche
Elenco completo delle specifiche tecniche
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Caratteristiche principali
Tipo di memoria
DDR4
DDR4
Latenza in PassMark, ns
27
85
Velocità di lettura, GB/s
16.7
11.3
Velocità di scrittura, GB/s
11.8
6.0
Larghezza di banda della memoria, mbps
21300
21300
Other
Descrizione
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)
2756
1118
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB Confronto tra le RAM
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB Confronto tra le RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
Ramaxel Technology RMT3010EC58E8F1333 2GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston X2YH1K-MIE-NX 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
AMD R5S38G1601U2S 8GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Segnala un bug
×
Bug description
Source link