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Kingston 9905471-006.A01LF 4GB
Samsung M393A1G43DB1-CRC 8GB

Kingston 9905471-006.A01LF 4GB vs Samsung M393A1G43DB1-CRC 8GB

Punteggio complessivo
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Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Punteggio complessivo
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Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston 9905471-006.A01LF 4GB Motivi da considerare
Kingston 9905471-006.A01LF 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    12 left arrow 10.8
    Valore medio nei test
Samsung M393A1G43DB1-CRC 8GB Motivi da considerare
Samsung M393A1G43DB1-CRC 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    32 left arrow 37
    Intorno -16% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.5 left arrow 7.5
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 10600
    Intorno 1.81 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Kingston 9905471-006.A01LF 4GB
Samsung M393A1G43DB1-CRC 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    37 left arrow 32
  • Velocità di lettura, GB/s
    12.0 left arrow 10.8
  • Velocità di scrittura, GB/s
    7.5 left arrow 8.5
  • Larghezza di banda della memoria, mbps
    10600 left arrow 19200
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    1853 left arrow 2349

Kingston 9905471-006.A01LF 4GB Confronto tra le RAM

Kingston 9905471-017.A00LF 4GB
Corsair CMD8GX3M2A1600C8 4GB

Samsung M393A1G43DB1-CRC 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Memoria RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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Crucial Technology BL32G32C16U4R.M16FB1 32GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Memoria RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston X2YH1K-MIE-NX 16GB
Kingston X2YH1K-MIE-NX 16GB
Memoria RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Crucial Technology CT4G4DFS8213.C8FAR1 4GB
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Samsung M393B1K70QB0-CK0 8GB
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Chun Well Technology Holding Limited CL19-20-20 D4-3600
Memoria RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F4-4000C18-32GVK 32GB
Memoria RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Memoria RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Transcend Information TS1GSH64V4B 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5743-031.A00G 16GB
Kingston 99U5743-031.A00G 16GB
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Kingston KHX1600C9D3/8GX 8GB
Kingston KHX1600C9D3/8GX 8GB
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