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Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18JSF51272PZ-1G4D1 4GB

Kingston ACR512X64D3S13C9G 4GB vs Micron Technology 18JSF51272PZ-1G4D1 4GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Punteggio complessivo
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Micron Technology 18JSF51272PZ-1G4D1 4GB

Micron Technology 18JSF51272PZ-1G4D1 4GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston ACR512X64D3S13C9G 4GB Motivi da considerare
Kingston ACR512X64D3S13C9G 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    27 left arrow 43
    Intorno 37% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.5 left arrow 7.5
    Valore medio nei test
Micron Technology 18JSF51272PZ-1G4D1 4GB Motivi da considerare
Micron Technology 18JSF51272PZ-1G4D1 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11.7 left arrow 11.5
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18JSF51272PZ-1G4D1 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    27 left arrow 43
  • Velocità di lettura, GB/s
    11.5 left arrow 11.7
  • Velocità di scrittura, GB/s
    8.5 left arrow 7.5
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1756 left arrow 2140

Kingston ACR512X64D3S13C9G 4GB Confronto tra le RAM

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Micron Technology 18JSF51272PZ-1G4D1 4GB Confronto tra le RAM

Team Group Inc. TEAMGROUP-UD4-2933 8GB
V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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