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Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

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Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

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Differenze Specifiche tecniche Commenti

Specifiche tecniche

Elenco completo delle specifiche tecniche
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    39 left arrow 39
  • Velocità di lettura, GB/s
    16.1 left arrow 16.1
  • Velocità di scrittura, GB/s
    11.9 left arrow 11.9
  • Larghezza di banda della memoria, mbps
    25600 left arrow 25600
Other
  • Descrizione
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Temporizzazioni / Velocità di clock
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Classifica PassMark (più sono, meglio è)
    2782 left arrow 2782

Micron Technology 4ATF1G64HZ-3G2B2 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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