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Samsung DDR3 8GB 1600MHz 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Punteggio complessivo
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Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung DDR3 8GB 1600MHz 8GB Motivi da considerare
Samsung DDR3 8GB 1600MHz 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    14.9 left arrow 13.9
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    9.6 left arrow 6.5
    Valore medio nei test
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB Motivi da considerare
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    24 left arrow 43
    Intorno -79% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 12800
    Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung DDR3 8GB 1600MHz 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    43 left arrow 24
  • Velocità di lettura, GB/s
    14.9 left arrow 13.9
  • Velocità di scrittura, GB/s
    9.6 left arrow 6.5
  • Larghezza di banda della memoria, mbps
    12800 left arrow 19200
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2506 left arrow 2113

Samsung DDR3 8GB 1600MHz 8GB Confronto tra le RAM

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Memoria RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
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Corsair CMD16GX4M4C3200C16 4GB
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G Skill Intl F5-6400J3239G16G 16GB
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Crucial Technology CT8G4SFS824A.M8FH 8GB
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Micron Technology 18ASF2G72AZ-2G3B1 16GB
Memoria RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Memoria RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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G Skill Intl F4-3200C16-4GVK 4GB
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Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
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Kingston 9905665-020.A00G 4GB
Memoria RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-3600C19-8GSXK 8GB
Memoria RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
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A-DATA Technology AO1P32MCST2-BZPS 16GB
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SK Hynix HMT425S6CFR6A-PB 2GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Memoria RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Memoria RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
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Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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Crucial Technology CT8G4SFD8213.M16FB 8GB
Memoria RAM
Kingston KHX318C10FR/8G 8GB
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Kingston 9905700-097.A00G 8GB
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Memoria RAM