Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Punteggio complessivo

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Punteggio complessivo

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung DDR3 8GB 1600MHz 8GB

Motivi da considerare
Samsung DDR3 8GB 1600MHz 8GB

Velocità di lettura più elevata, GB/s

14.9 10.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.6 8.9

Valore medio nei test

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Motivi da considerare
Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Al di sotto della latenza nei test PassMark, ns

32 43

Intorno -34% latenza inferiore
Larghezza di banda di memoria superiore, mbps

21300 12800

Intorno 1.66 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

43 32
Velocità di lettura, GB/s

14.9 10.5
Velocità di scrittura, GB/s

9.6 8.9
Larghezza di banda della memoria, mbps

12800 21300

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)

2506 2386

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