Samsung M3 78T2863QZS-CF7 1GB vs Corsair CM4X8GE2400C15K4 8GB

Punteggio complessivo

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Punteggio complessivo

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T2863QZS-CF7 1GB

Motivi da considerare
Samsung M3 78T2863QZS-CF7 1GB

Velocità di lettura più elevata, GB/s

4 15.5

Valore medio nei test

Corsair CM4X8GE2400C15K4 8GB

Motivi da considerare
Corsair CM4X8GE2400C15K4 8GB

Al di sotto della latenza nei test PassMark, ns

22 69

Intorno -214% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.4 1,857.7

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 6400

Intorno 2.66 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 78T2863QZS-CF7 1GB

Corsair CM4X8GE2400C15K4 8GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

69 22
Velocità di lettura, GB/s

4,217.2 15.5
Velocità di scrittura, GB/s

1,857.7 8.4
Larghezza di banda della memoria, mbps

6400 17000

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

668 2319

RAM Latency Calculator

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Ultimi confronti

Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Samsung V-GeN D4S4GL30A16TS5 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Essencore Limited KD48GU880-36A180U 8GB

Samsung M378A1K43EB2-CWE 8GB

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Hewlett-Packard 7EH64AA#ABC 8GB

Hewlett-Packard 7EH64AA#ABC 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB