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Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Samsung M393A1G40DB0-CPB 8GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Punteggio complessivo
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Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393A1G40DB0-CPB 8GB Motivi da considerare
Samsung M393A1G40DB0-CPB 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10.9 left arrow 9.6
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.7 left arrow 8.6
    Valore medio nei test
Micron Technology 18ASF1G72AZ-2G1B1 8GB Motivi da considerare
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    33 left arrow 49
    Intorno -48% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    49 left arrow 33
  • Velocità di lettura, GB/s
    10.9 left arrow 9.6
  • Velocità di scrittura, GB/s
    8.7 left arrow 8.6
  • Larghezza di banda della memoria, mbps
    17000 left arrow 17000
Other
  • Descrizione
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Temporizzazioni / Velocità di clock
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2427 left arrow 2286

Samsung M393A1G40DB0-CPB 8GB Confronto tra le RAM

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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