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Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB vs Samsung M393A2K40CB2-CTD 16GB

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Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Punteggio complessivo
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Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Differenze Specifiche tecniche Commenti

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393A2K40CB2-CTD 16GB
Samsung M393A2K40CB2-CTD 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    52 left arrow 52
  • Velocità di lettura, GB/s
    10.0 left arrow 10.0
  • Velocità di scrittura, GB/s
    7.3 left arrow 7.3
  • Larghezza di banda della memoria, mbps
    21300 left arrow 21300
Other
  • Descrizione
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Temporizzazioni / Velocità di clock
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Classifica PassMark (più sono, meglio è)
    2306 left arrow 2306

Samsung M393A2K40CB2-CTD 16GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2K40CB2-CTD 16GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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