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Samsung M393B1K70QB0-CK0 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB

Samsung M393B1K70QB0-CK0 8GB vs Micron Technology 18ADF1G72PZ-2G1A1 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B1K70QB0-CK0 8GB Motivi da considerare
Samsung M393B1K70QB0-CK0 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10.4 left arrow 9.2
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.8 left arrow 6.8
    Valore medio nei test
Micron Technology 18ADF1G72PZ-2G1A1 8GB Motivi da considerare
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    32 left arrow 47
    Intorno -47% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    47 left arrow 32
  • Velocità di lettura, GB/s
    10.4 left arrow 9.2
  • Velocità di scrittura, GB/s
    7.8 left arrow 6.8
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2169 left arrow 2017

Samsung M393B1K70QB0-CK0 8GB Confronto tra le RAM

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
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Kingston 9905625-097.A00G 16GB
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Memoria RAM
Samsung M391B5673EH1-CH9 2GB
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Kingston KVR800D2N6/2G 2GB
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Micron Technology 9ASF51272PZ-2G1A2 4GB
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Samsung M393B1G70BH0-YK0 8GB
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Memoria RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Memoria RAM
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Memoria RAM