Samsung M393B5270CH0-CH9 4GB vs SK Hynix HMA41GR7MFR4N-TFTD 8GB

Punteggio complessivo

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Punteggio complessivo

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B5270CH0-CH9 4GB

Motivi da considerare
Samsung M393B5270CH0-CH9 4GB

Velocità di lettura più elevata, GB/s

10.6 9.1

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.0 7.5

Valore medio nei test

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Motivi da considerare
SK Hynix HMA41GR7MFR4N-TFTD 8GB

Al di sotto della latenza nei test PassMark, ns

36 42

Intorno -17% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 10600

Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M393B5270CH0-CH9 4GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

42 36
Velocità di lettura, GB/s

10.6 9.1
Velocità di scrittura, GB/s

9.0 7.5
Larghezza di banda della memoria, mbps

10600 17000

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2423 1927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMT32GX4M2Z3200C16 16GB

Corsair CMT32GX4M2Z3200C16 16GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Mushkin MRA4S266GHHF32G 32GB

Mushkin MRA4S266GHHF32G 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6AFR8C-G7 4GB

SK Hynix HMT351S6AFR8C-G7 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Nanya Technology M2X8G64CB8HB5N-DG 8GB

Nanya Technology M2X8G64CB8HB5N-DG 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB