Samsung M471A1K43EB1-CWE 8GB vs SK Hynix HMA81GS6DJR8N-XN 8GB

Punteggio complessivo

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Punteggio complessivo

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471A1K43EB1-CWE 8GB

Motivi da considerare
Samsung M471A1K43EB1-CWE 8GB

Velocità di lettura più elevata, GB/s

16 15.8

Valore medio nei test

SK Hynix HMA81GS6DJR8N-XN 8GB

Motivi da considerare
SK Hynix HMA81GS6DJR8N-XN 8GB

Al di sotto della latenza nei test PassMark, ns

35 46

Intorno -31% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471A1K43EB1-CWE 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Caratteristiche principali

Tipo di memoria

DDR4 DDR4
Latenza in PassMark, ns

46 35
Velocità di lettura, GB/s

16.0 15.8
Velocità di scrittura, GB/s

12.4 12.4
Larghezza di banda della memoria, mbps

25600 25600

Other

Descrizione

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Temporizzazioni / Velocità di clock

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classifica PassMark (più sono, meglio è)

2660 2852

RAM Latency Calculator

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RAM 2

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