A-DATA Technology DOVF1B163G2G 2GB vs Chun Well Technology Holding Limited D4U1636181DC 16GB

総合得点

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

総合得点

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

相違点仕様コメント

相違点

A-DATA Technology DOVF1B163G2G 2GB

考慮すべき理由
A-DATA Technology DOVF1B163G2G 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 17.3

テスト平均値

Chun Well Technology Holding Limited D4U1636181DC 16GB

考慮すべき理由
Chun Well Technology Holding Limited D4U1636181DC 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

36 56

周辺 -56% 低遅延
書き込み速度の高速化、GB/s

12.2 1,925.7

テスト平均値
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology DOVF1B163G2G 2GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

56 36
読み出し速度、GB/s

4,315.2 17.3
書き込み速度、GB/秒

1,925.7 12.2
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

658 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C19-16GSXWB 16GB

G Skill Intl F4-3600C19-16GSXWB 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB