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A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

A-DATA Technology DOVF1B163G2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

総合得点
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

総合得点
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

相違点 仕様 コメント

相違点

A-DATA Technology DOVF1B163G2G 2GB 考慮すべき理由
A-DATA Technology DOVF1B163G2G 2GB
バグを報告する
  • 読み出し速度の高速化、GB/s
    4 left arrow 14.6
    テスト平均値
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
バグを報告する
  • PassMarkテストでのレイテンシー以下、ns
    27 left arrow 56
    周辺 -107% 低遅延
  • 書き込み速度の高速化、GB/s
    10.5 left arrow 1,925.7
    テスト平均値
  • より高いメモリ帯域幅、mbps
    17000 left arrow 6400
    周辺 2.66 高帯域

仕様

技術仕様の完全リスト
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主な特徴
  • メモリータイプ
    DDR2 left arrow DDR4
  • PassMarkにおけるレイテンシー、ns
    56 left arrow 27
  • 読み出し速度、GB/s
    4,315.2 left arrow 14.6
  • 書き込み速度、GB/秒
    1,925.7 left arrow 10.5
  • メモリ帯域幅、mbps
    6400 left arrow 17000
Other
  • 商品説明
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • タイミング / クロック速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • ランキングPassMark（多ければ多いほど良い）
    658 left arrow 2409

A-DATA Technology DOVF1B163G2G 2GB RAMの比較

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAMの比較

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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