ASint Technology SSA302G08-EGN1C 4GB vs Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

総合得点

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

総合得点

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

相違点仕様コメント

相違点

ASint Technology SSA302G08-EGN1C 4GB

考慮すべき理由
ASint Technology SSA302G08-EGN1C 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 74

周辺 65% 低遅延
書き込み速度の高速化、GB/s

9.5 7.9

テスト平均値

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

考慮すべき理由
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

バグを報告する

読み出し速度の高速化、GB/s

13.8 12.6

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

ASint Technology SSA302G08-EGN1C 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

26 74
読み出し速度、GB/s

12.6 13.8
書き込み速度、GB/秒

9.5 7.9
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2174 1825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Corsair CMK32GX4M4K3600C16 8GB

Corsair CMK32GX4M4K3600C16 8GB

Kingston 9965516-481.A00LF 16GB

Kingston 9965516-481.A00LF 16GB

Kingston 9965516-071.A00LF 16GB

Kingston 9965516-071.A00LF 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Corsair CMD32GX4M2B3466C16 16GB

Corsair CMD32GX4M2B3466C16 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB