Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB vs G Skill Intl F5-5600U3636C16G 16GB

総合得点

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

総合得点

G Skill Intl F5-5600U3636C16G 16GB

G Skill Intl F5-5600U3636C16G 16GB

相違点仕様コメント

相違点

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

考慮すべき理由
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

バグを報告する

読み出し速度の高速化、GB/s

18.1 14.4

テスト平均値
書き込み速度の高速化、GB/s

14.8 13.0

テスト平均値

G Skill Intl F5-5600U3636C16G 16GB

考慮すべき理由
G Skill Intl F5-5600U3636C16G 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 28

周辺 -12% 低遅延
より高いメモリ帯域幅、mbps

19200 17000

周辺 1.13 高帯域

仕様

技術仕様の完全リスト

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

G Skill Intl F5-5600U3636C16G 16GB

主な特徴

メモリータイプ

DDR4 DDR5
PassMarkにおけるレイテンシー、ns

28 25
読み出し速度、GB/s

18.1 14.4
書き込み速度、GB/秒

14.8 13.0
メモリ帯域幅、mbps

17000 19200

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 14 15 16 PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz no data / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

3564 3477

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

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Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

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G Skill Intl F4-3200C16-8GVGB 8GB

Micron Technology 16HTF25664HY-800J2 2GB

Micron Technology 16HTF25664HY-800J2 2GB

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Kingston 9905403-447.A00LF 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB