Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BL32G32C16U4BL.M16FB 32GB

総合得点

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

総合得点

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

相違点仕様コメント

相違点

Crucial Technology BLT2G3D1608DT1TX0 2GB

考慮すべき理由
Crucial Technology BLT2G3D1608DT1TX0 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 29

周辺 21% 低遅延

Crucial Technology BL32G32C16U4BL.M16FB 32GB

考慮すべき理由
Crucial Technology BL32G32C16U4BL.M16FB 32GB

バグを報告する

読み出し速度の高速化、GB/s

19.8 13.6

テスト平均値
書き込み速度の高速化、GB/s

16.0 9.4

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

23 29
読み出し速度、GB/s

13.6 19.8
書き込み速度、GB/秒

9.4 16.0
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2096 3920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HP32D4S2S1ME-4 4GB

Kingston HP32D4S2S1ME-4 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Essencore Limited IM4AGU88N26-GIIHMB 16GB

Essencore Limited IM4AGU88N26-GIIHMB 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMK16GX4M4B3200C16 4GB

Corsair CMK16GX4M4B3200C16 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB