Crucial Technology CT102464BA160B.M16 8GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

総合得点

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

総合得点

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

相違点仕様コメント

相違点

Crucial Technology CT102464BA160B.M16 8GB

考慮すべき理由
Crucial Technology CT102464BA160B.M16 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

40 54

周辺 26% 低遅延

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

考慮すべき理由
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

バグを報告する

読み出し速度の高速化、GB/s

15.2 12.6

テスト平均値
書き込み速度の高速化、GB/s

14.3 7.8

テスト平均値
より高いメモリ帯域幅、mbps

25600 12800

周辺 2 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT102464BA160B.M16 8GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

40 54
読み出し速度、GB/s

12.6 15.2
書き込み速度、GB/秒

7.8 14.3
メモリ帯域幅、mbps

12800 25600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2209 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9965589-033.D00G 8GB

Kingston 9965589-033.D00G 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 9905598-044.A00G 16GB

Kingston 9905598-044.A00G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingston 9905664-010.A00G 4GB

Kingston 9905664-010.A00G 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3600C16-16GTZR 16GB

G Skill Intl F4-3600C16-16GTZR 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240