Crucial Technology CT51264BA1339.C16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

総合得点

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

相違点仕様コメント

相違点

Crucial Technology CT51264BA1339.C16F 4GB

考慮すべき理由
Crucial Technology CT51264BA1339.C16F 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 35

周辺 23% 低遅延
読み出し速度の高速化、GB/s

13.9 10.5

テスト平均値
書き込み速度の高速化、GB/s

8.4 8.1

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

バグを報告する

より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BA1339.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

27 35
読み出し速度、GB/s

13.9 10.5
書き込み速度、GB/秒

8.4 8.1
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2251 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CM4B8G1J2400A16K2-O 8GB

Corsair CM4B8G1J2400A16K2-O 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Apacer Technology 78.CAGR4.DFC0B 8GB

Apacer Technology 78.CAGR4.DFC0B 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB