Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology BL8G32C16S4B.M8FE1 8GB

総合得点

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

総合得点

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

相違点仕様コメント

相違点

Crucial Technology CT51264BD1339.M16F 4GB

考慮すべき理由
Crucial Technology CT51264BD1339.M16F 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 37

周辺 32% 低遅延

Crucial Technology BL8G32C16S4B.M8FE1 8GB

考慮すべき理由
Crucial Technology BL8G32C16S4B.M8FE1 8GB

バグを報告する

読み出し速度の高速化、GB/s

17.8 12.1

テスト平均値
書き込み速度の高速化、GB/s

14.2 8.6

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 37
読み出し速度、GB/s

12.1 17.8
書き込み速度、GB/秒

8.6 14.2
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2045 3171

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Absolute Latency

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最新の比較

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3200C16-16GTZ 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMK64GX4M8X3600C18 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB