Crucial Technology CT51264BD1339.M16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

総合得点

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

相違点仕様コメント

相違点

Crucial Technology CT51264BD1339.M16F 4GB

考慮すべき理由
Crucial Technology CT51264BD1339.M16F 4GB

バグを報告する

書き込み速度の高速化、GB/s

8.6 6.7

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 25

周辺 -9% 低遅延
読み出し速度の高速化、GB/s

13.6 12.1

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BD1339.M16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 23
読み出し速度、GB/s

12.1 13.6
書き込み速度、GB/秒

8.6 6.7
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2045 2339

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N

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Crucial Technology CT4G4DFS824A.M8FE 4GB

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AMD R5S38G1601U2S 8GB

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Micron Technology 36ASF4G72PZ-2G1A1 32GB

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Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 99P5471-002.A00LF 2GB

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SK Hynix HMA82GU6DJR8N-WM 16GB

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