Crucial Technology CT51264BD1339.M16F 4GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

総合得点

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

総合得点

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

相違点仕様コメント

相違点

Crucial Technology CT51264BD1339.M16F 4GB

考慮すべき理由
Crucial Technology CT51264BD1339.M16F 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 32

周辺 22% 低遅延
読み出し速度の高速化、GB/s

12.1 11.8

テスト平均値

Micron Technology 18ADF2G72PZ-2G3B1 16GB

考慮すべき理由
Micron Technology 18ADF2G72PZ-2G3B1 16GB

バグを報告する

書き込み速度の高速化、GB/s

8.7 8.6

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 32
読み出し速度、GB/s

12.1 11.8
書き込み速度、GB/秒

8.6 8.7
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2045 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Crucial Technology CT16G4DFD824A.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston HX424C15FB/16 16GB

Kingston HX424C15FB/16 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Ramaxel Technology RMR5030MN68F9F1600 4GB

Ramaxel Technology RMR5030MN68F9F1600 4GB

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB