Crucial Technology CT51264BD1339.M16F 4GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB

総合得点

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

総合得点

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

相違点仕様コメント

相違点

Crucial Technology CT51264BD1339.M16F 4GB

考慮すべき理由
Crucial Technology CT51264BD1339.M16F 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 36

周辺 31% 低遅延

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

考慮すべき理由
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

バグを報告する

読み出し速度の高速化、GB/s

15.5 12.1

テスト平均値
書き込み速度の高速化、GB/s

12.8 8.6

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 36
読み出し速度、GB/s

12.1 15.5
書き込み速度、GB/秒

8.6 12.8
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2045 3050

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston 9905625-065.A00G 16GB

Kingston 9905625-065.A00G 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMT32GX4M2Z3200C16 16GB

Corsair CMT32GX4M2Z3200C16 16GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston HP32D4U8S8HC-8XR 8GB

Kingston HP32D4U8S8HC-8XR 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB