G Skill Intl F2-8500CL5-2GBPI 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

総合得点

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

総合得点

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

相違点仕様コメント

相違点

G Skill Intl F2-8500CL5-2GBPI 2GB

考慮すべき理由
G Skill Intl F2-8500CL5-2GBPI 2GB

バグを報告する

読み出し速度の高速化、GB/s

6 18.1

テスト平均値
書き込み速度の高速化、GB/s

2,935.8 15.0

テスト平均値

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

考慮すべき理由
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 45

周辺 -96% 低遅延
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

G Skill Intl F2-8500CL5-2GBPI 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

45 23
読み出し速度、GB/s

6,336.8 18.1
書き込み速度、GB/秒

2,935.8 15.0
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1144 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston CBD26D4S9D8ME-16 16GB

Kingston CBD26D4S9D8ME-16 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK64GX4M8A2400C14 8GB

Corsair CMK64GX4M8A2400C14 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905678-177.A00G 8GB

Kingston 9905678-177.A00G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB